logo

TSCDT12065G1 Datasheet, Taiwan Semiconductor

TSCDT12065G1 diode equivalent, 650v sic merged pin schottky diode.

TSCDT12065G1 Avg. rating / M : 1.0 rating-15

datasheet Download

TSCDT12065G1 Datasheet

Features and benefits


* Max junction temperature 175°C
* MPS structure for high ruggedness to forward current surge events
* High-speed switching possible
* High forward surge .

Application


* General purpose
* Switch mode power supplies
* Power factor correction MECHANICAL DATA
* Case: TO-220.

Image gallery

TSCDT12065G1 Page 1 TSCDT12065G1 Page 2 TSCDT12065G1 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts